Transistor H25R1203 1200V 25A

Transistor H25R1203 1200V 25A

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Reference: TR-H25R1203

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5,41 €

Transistor H25R1203 1200V 25A

Transistor H25R1203 very used in induction cookers

The H25R1203 is designed as one kind of reverse conducting IGBT with monolithic body diode which has some features such as:

  • Body diode clamps negative voltages
  • Powerful monolithic body diode with very low forward voltage
  • Trench and Fieldstop technology for 1200 V applications offers very tight parameter distribution and high ruggedness, temperature stable behavior
  • NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
  • Low EMI
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating;RoHS compliant.And it can be used in inductive cooking and soft switching applications
 

Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
     - very tight parameter distribution
     - high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Aplications

• Inductive Cooking
• Soft Switching Applications

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